?_/ ducts, 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SC2594 description ? collector-emitter breakdown voltage- : v(br)ceo= 20v(min) ? good linearity of hfe ? low collector saturation voltage applications ? af power amplifier ? for electronic flash unit ? converter absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic i cm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ tc=25"c junction temperature storage temperature range value 40 20 7 5 8 10 150 -55-150 unit v v v a a w "c "c pin 1. emitter 2. collector s 3. base ; ; 3 to-1 26 package t?? b-*i i _, -*< ( r i i : f d? fj a i!" i g > .? .,,?! ?,,? 1 ? 1 2 , dim a b r d f g h j k o r v o f ? *t a \ y ' k ~* 1 n 3 mm men max 10.70 10.s5 7.70 7,90 2.60 2.80 0,66 o.&s 3.10 3.30 4.48 4.68 2.00 2.20 1.35 1.56 1s.30 16.30 3.70 3.90 0.40 0.60 1,17 1,37 "-r n.i semi-coudiiltors reserves the right to change test conditions, parameter limits and package dimensions \\ithout notice. inronnation furnished hy n.i semi-conductors is believed to he both accurate and reliable at the time to press. i kmever. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use n.i scmi-l'(inductors encouiages eusliinicrs to verily that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC2594 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)ebo vce(sat) icbo iebo hpe-1 hfe-2 fj cob parameter collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc= 1ma; ib= 0 le=10m a; lc- 0 lc=3a; ib=0.1a vcb= 10v; ie- 0 veb= 7v; lc- 0 lc= 0.5a; vce= 2v lc=1a;vce=2v ie= -50ma; vcb= 6v le= 0; vcb= 20v, f,8st= 1mhz min 20 7 140 70 typ. 150 max 1.0 0.1 0.1 450 50 unit v v v u a m a mhz pf
|
